What you linked is bonding a diamond substrate to the back of your IC. What's in the post is growing diamond lattice/features directly on your wafer. With the new way, you can get diamond closer to your heat sources, increase contact area, etc.
No idea if it actually matters. Is this a single digit percentage increase in thermal conductivity by messing with a finicky, temperamental process? I don't know. What the paper writers are proposing is under the limit of when transistor structures break down, but not by much.
No idea if it actually matters. Is this a single digit percentage increase in thermal conductivity by messing with a finicky, temperamental process? I don't know. What the paper writers are proposing is under the limit of when transistor structures break down, but not by much.